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| 2N4126 / MMBT4126 Discrete POWER & Signal Technologies 2N4126 MMBT4126 C E C BE TO-92 SOT-23 Mark: ZF B PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at collector currents to 10 A as a switch and to 100 mA as an amplifier. Sourced from Process 66. See 2N3906 for characteristics. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25C unless otherwise noted Parameter Value 25 25 4.0 200 -55 to +150 Units V V V mA C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA= 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N4126 625 5.0 83.3 200 Max *MMBT4126 350 2.8 357 Units mW mW/C C/W C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." (c) 1997 Fairchild Semiconductor Corporation 2N4126 / MMBT4126 PNP General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current IC = 1.0 mA, IB = 0 IC = 10 A, I E = 0 IC = 10 A, I C = 0 VCB = 20 V, IE = 0 VEB = 3.0 V, IC = 0 25 25 4.0 50 50 V V V nA nA ON CHARACTERISTICS* hFE VCE(sat) VBE(sat) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage IC = 2.0 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V IC = 50 mA, IB = 5.0 mA IC = 50 mA, IB = 5.0 mA 120 60 360 0.4 0.95 V V SMALL SIGNAL CHARACTERISTICS fT Cibo Ccb hfe NF Current Gain - Bandwidth Product Input Capacitance Collector-Base Capcitance Small-Signal Current Gain Noise Figure IC = 10 mA, VCE = 20 V, f = 100 MHz VEB = 0.5 V, IC = 0, f = 1.0 MHz VCB = 5.0 V, IE = 0, f = 100 kHz IC = 2.0 mA, VCE = 10 V, f = 1.0 kHz IC = 100 A, VCE = 5.0 V, RS=1.0 k, f=10 Hz to 15.7 kHz 250 10 4.5 120 480 4.0 dB MHz pF pF *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% |
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